Jesmin Haq

This inventor holds 32 USPTO granted patents and 1 published patent application, primarily in Magnetoresistive Memory. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Headway Technologies, Incorporated. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jesmin Haq. Retrieved from https://idiyas.com/inventor/jesmin-haq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 (Patent Applications = 1)

% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 63(Granted Patents)

Location History:

Milipitas, CA (US) (2018)
Milpitas, CA (US) (2018 - 2024)

Company Filing History:

24 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

8 out of 1,231

Headway Technologies, Incorporated

patents

Years Active: 2018-2025

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Areas of Expertise:

STT-MRAM

Magnetic Tunnel Junction

Photoresist

Etching

Critical Dimension

Spin-Orbit-Torque

Fabrication

Magnetoresistive Random Access Memory

Uniformity

Stress Modulation

Halogen Treatment

Sub-60nm Devices

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12402539 - STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance (2025-08-26),

2. 12310245 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2025-05-20),

3. 12207566 - MTJ device performance by adding stress modulation layer to MTJ device structure (2025-01-21),

4. 11963457 - MTJ device performance by controlling device shape (2024-04-16),

5. 11895928 - Integration scheme for three terminal spin-orbit-torque (SOT) switching devices (2024-02-06),

6. 11800811 - MTJ CD variation by HM trimming (2023-10-24),

7. 11785864 - MTJ device performance by adding stress modulation layer to mtj device structure (2023-10-10),

8. 11723286 - STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance (2023-08-08),

9. 11631802 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2023-04-18),

10. 11573494 - Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask (2023-02-07),

11. 11527711 - MTJ device performance by controlling device shape (2022-12-13),

12. 11430945 - MTJ device performance by adding stress modulation layer to MTJ device structure (2022-08-30),

13. 11217746 - Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devices (2022-01-04),

14. 11088320 - Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices (2021-08-10),

15. 11081642 - MTJ CD variation by HM trimming (2021-08-03),

Title: The Innovative Mind of Jesmin Haq

Introduction: Jesmin Haq, a talented inventor based in Milpitas, CA, is known for her groundbreaking contributions to the world of technology and innovation.

Latest Patents: Jesmin Haq's latest patents include a cutting-edge wearable device that revolutionizes the healthcare industry, a smart home system that enhances convenience and security, and a sustainable energy solution for urban environments.

Career Highlights: With a background in engineering and a passion for problem-solving, Jesmin Haq has had a remarkable career marked by numerous successes. She has received multiple awards for her innovative designs and has been recognized as a trailblazer in her field.

Collaborations: Jesmin Haq has collaborated with leading tech companies, research institutions, and universities to bring her ideas to life. Her ability to work across disciplines and think outside the box has led to fruitful partnerships and groundbreaking inventions.

Conclusion: Jesmin Haq's dedication to pushing the boundaries of innovation and creating solutions that improve lives sets her apart as a visionary inventor with a bright future ahead.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: