Deren Yang

Title: Deren Yang: Innovator in Gallium Oxide Technologies

Introduction

Deren Yang is a prominent inventor based in Hangzhou, China, known for his significant contributions to the field of semiconductor materials, particularly gallium oxide. With a total of five patents to his name, Yang has made strides in developing innovative methods for creating advanced materials that have broad applications in technology.

Latest Patents

Yang's latest patents include a preparation method and application of an Er doped Ga2O3 film. This invention discloses a method for creating an Er doped Ga2O3 film, which involves depositing films using Radio-Frequency magnetron sputtering onto heated substrates. The process includes thermal treatment at temperatures above 300° C. to activate Er and crystallize Ga2O3 hosts, making it suitable for use in silicon-based integrated light sources and optical communication. Another notable patent is a method for growing gallium oxide single crystals by casting, which outlines a process that includes heating solid gallium oxide to a melting point and conducting gradient cooling to obtain a single crystal. This method is significant for its potential applications in semiconductor devices.

Career Highlights

Throughout his career, Deren Yang has worked with esteemed institutions such as Zhejiang University and the Zju-Hangzhou Global Scientific and Technological Innovation Center. His work has focused on advancing the understanding and application of gallium oxide in various technological fields.

Collaborations

Yang has collaborated with notable colleagues, including Rong Wang and Xiaodong Pi, contributing to the advancement of research in semiconductor technologies.

Conclusion

Deren Yang's innovative work in gallium oxide technologies positions him as a key figure in the field of semiconductor materials. His patents reflect a commitment to advancing technology and enhancing the capabilities of modern electronic devices.