The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Dec. 21, 2022
Applicant:

Zju-hangzhou Global Scientific and Technological Innovation Center, Hangzhou, CN;

Inventors:

Jiajun Li, Hangzhou, CN;

Rong Wang, Hangzhou, CN;

Xiaodong Pi, Hangzhou, CN;

Deren Yang, Hangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02002 (2013.01);
Abstract

The present disclosure relates to the technical field of silicon carbide processing, and discloses a method and device for preferential etching of dislocation of a silicon carbide wafer. According to the method and device of the present disclosure, a concentration of the etchant is effectively reduced while the high-temperature etching activity is guaranteed, the dislocations on the carbon surface and the silicon surface of the silicon carbide wafer are exposed, and dislocation etching pits with high distinguishing degree are obtained on the carbon surface and the silicon surface of the silicon carbide wafer and thus identified clearly.


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