Xiaodong Pi

Title: Innovations by Xiaodong Pi in Silicon Carbide Processing

Introduction

Xiaodong Pi is a notable inventor based in Hangzhou, China, recognized for his contributions to the field of silicon carbide processing. With a total of two patents to his name, he has made significant advancements in the manufacturing of silicon carbide single crystal wafers.

Latest Patents

Xiaodong Pi's latest patents include a "Stripping method and stripping device for silicon carbide single crystal wafers." This innovation focuses on the manufacturing process of silicon carbide (SiC) single crystal wafers, ensuring that the wafers produced have no damage layer or stress residue on their surfaces or sub-surfaces. The method is designed to be simple in operation and cost-effective. Another significant patent is the "Method and device for preferential etching of dislocation of silicon carbide wafer." This invention addresses the technical challenges in silicon carbide processing by effectively reducing the concentration of the etchant while maintaining high-temperature etching activity. It allows for the exposure of dislocations on both the carbon and silicon surfaces of the silicon carbide wafer, resulting in clearly identifiable dislocation etching pits.

Career Highlights

Xiaodong Pi is currently associated with the ZJU-Hangzhou Global Scientific and Technological Innovation Center, where he continues to work on innovative solutions in the field of materials science. His expertise in silicon carbide processing has positioned him as a key figure in advancing this technology.

Collaborations

Xiaodong has collaborated with notable colleagues such as Rong Wang and Deren Yang, contributing to the development of cutting-edge technologies in silicon carbide processing.

Conclusion

Xiaodong Pi's work in silicon carbide processing exemplifies the impact of innovation in materials science. His patents not only enhance the manufacturing process but also pave the way for future advancements in the field.