Zhejiang University

Zju-hangzhou Global Scientific and Technological Innovation Center

Hangzhou Garen Semiconductor Co., Ltd.

Deren Yang

Rong Wang

Xiaodong Pi

Ning Xia

Hui Zhang

Jiajun Li

Biao Wang

Wenhao Geng

Dongsheng Li

Yingying Liu

Xiangyang Ma

Keke Ma

Ze Xu

The present invention discloses an Er doped GaOfilm, together with its preparation method and the application in the field of luminescence. The preparation method contains steps of: (1) the films are deposited by means of Radio-Frequency magnetron sputtering onto the heated substrates after the pre-sputtering for at least 5 minutes, selecting Er doped GaOtarget or Er and GaOtargets, with the ambient of Ar and O; (2) the films as prepared in step (1) are thermally treated at the temperature higher than 300° C. in the ambient of Oor N, in order to optically activate Erand crystalize GaOhosts meanwhile, followed by natural cooling, obtaining the Er doped GaOfilms as described. The preparation technology of the present invention is simple, with a good process compatibility. It is believed that the present invention will be widely used in the field of silicon-based integrated light sources, semiconductor luminescence, optical communication, with broad application prospects.

Preparation method and application of an Er doped Ga2O3 film

The disclosure provides a method for growing a gallium oxide single crystal by casting and a semiconductor device containing the gallium oxide single crystal. The method includes: 1) heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and 2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained. The gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal. In step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of at least 2% is present in a growth atmosphere.

Method for growing gallium oxide single crystal by casting and semiconductor device containing gallium oxide single crystal

The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.

Stripping method and stripping device for silicon carbide single crystal wafers

The present disclosure relates to the technical field of silicon carbide processing, and discloses a method and device for preferential etching of dislocation of a silicon carbide wafer. According to the method and device of the present disclosure, a concentration of the etchant is effectively reduced while the high-temperature etching activity is guaranteed, the dislocations on the carbon surface and the silicon surface of the silicon carbide wafer are exposed, and dislocation etching pits with high distinguishing degree are obtained on the carbon surface and the silicon surface of the silicon carbide wafer and thus identified clearly.

Method and device for preferential etching of dislocation of silicon carbide wafer

An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250&#xb0; C. at a heating rate of 50-100&#xb0; C./s under a nitrogen atmosphere, maintaining for 30-150 seconds, cooling the Cz silicon wafer to 800-1000&#xb0; C. first at a cooling rate of 5-50&#xb0; C./s, and then cooling the Cz silicon wafer naturally; (2) annealing the Cz silicon wafer obtained in the step (1) at 800-900&#xb0; C. under an argon atmosphere for a period of 8-16 hours. The present invention only involves two heat treatment steps which require lower temperature and shorter time comparing to the conventional processes. The density of the bulk microdefects and the width of the denuded zone can be easily controlled by the temperature, duration and cooling rate of rapid thermal processing in the first step.

Process of internal gettering for Czochralski silicon wafer

Growing community of inventors

Hangzhou, China

Deren Yang