The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 24, 2021
Zhejiang University, Hangzhou, CN;
Dongsheng Li, Hangzhou, CN;
Deren Yang, Hangzhou, CN;
ZHEJIANG UNIVERSITY, Hangzhou, CN;
Abstract
The present invention discloses an Er doped GaOfilm, together with its preparation method and the application in the field of luminescence. The preparation method contains steps of: (1) the films are deposited by means of Radio-Frequency magnetron sputtering onto the heated substrates after the pre-sputtering for at least 5 minutes, selecting Er doped GaOtarget or Er and GaOtargets, with the ambient of Ar and O; (2) the films as prepared in step (1) are thermally treated at the temperature higher than 300° C. in the ambient of Oor N, in order to optically activate Erand crystalize GaOhosts meanwhile, followed by natural cooling, obtaining the Er doped GaOfilms as described. The preparation technology of the present invention is simple, with a good process compatibility. It is believed that the present invention will be widely used in the field of silicon-based integrated light sources, semiconductor luminescence, optical communication, with broad application prospects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile