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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Dax M Crum

This inventor holds 26 USPTO granted patents and 13 published patent applications, primarily in Integrated Circuit Fabrication. Top assignee: Intel Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dax M Crum. Retrieved from https://idiyas.com/inventor/dax-m-crum

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 92.3

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 23(Granted Patents)


Company Filing History:

goldMedal26 out of 56,365 
 
Intel Corporation
 patents

Years Active: 2021-2026

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Areas of Expertise:
Gate-All-Around Structures
Integrated Circuit
Self-Aligned Gate Endcap
Dopant-Diffusion Blocking
High Mobility
Vertical Discrete Structures
Additive Metal Gates
Transistor Contact Area
Nanoribbon Devices
Threshold Voltages
Cyclic Selective Spacer Etch
Molybdenum Nitride
26 patents (USPTO):Explore Patents
1. 12696534 - Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer (2026-07-28),
2. 12615813 - Gate-all-around integrated circuit structures having vertically discrete source or drain structures (2026-04-28),
3. 12563782 - Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers (2026-02-24),
4. 12484266 - Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers (2025-11-25),
5. 12426307 - Dual metal gate structures on nanoribbon semiconductor devices (2025-09-23),
6. 12382706 - Self-aligned gate endcap (SAGE) architectures with gate-all-around devices (2025-08-05),
7. 12369393 - Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up approach (2025-07-22),
8. 12336278 - Gate-all-around integrated circuit structures having high mobility (2025-06-17),
9. 12310060 - Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerances (2025-05-20),
10. 12302632 - Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process (2025-05-13),
11. 12295170 - Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer (2025-05-06),
12. 12224350 - Self-aligned gate endcap (SAGE) architectures with gate-all-around devices (2025-02-11),
13. 12113068 - Fabrication of gate-all-around integrated circuit structures having additive metal gates (2024-10-08),
14. 12057491 - Self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substrates (2024-08-06),
15. 12051698 - Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer (2024-07-30),

Title: Innovations of Dax M Crum in Integrated Circuit Technology

Introduction

Dax M Crum is a prominent inventor based in Beaverton, Oregon, who has made significant contributions to the field of integrated circuit technology. With a total of 19 patents to his name, Crum's work demonstrates a commitment to advancing the performance and efficiency of electronic devices.

Latest Patents

Crum's latest patents focus on gate-all-around integrated circuit structures that feature high mobility. One notable patent describes an integrated circuit structure comprising a silicon nanowire or nanoribbon. This innovative design includes an N-type gate stack surrounding the silicon element, which incorporates a compressively stressing gate electrode. The architecture ensures enhanced mobility with positioned N-type epitaxial source or drain structures at both ends of the silicon nanowire or nanoribbon, enhancing device performance and reliability.

Another patent showcases a structure with uniform threshold voltages and tight gate endcap tolerances. This invention presents a vertical arrangement of horizontal nanowires within P-type and N-type regions, featuring dual gate stacks that optimize conductivity and gate efficiency. The integration of specific materials like Titanium and Nitrogen in the gate stack configuration further advances the miniaturization and performance of integrated circuits.

Career Highlights

Currently, Dax M Crum is associated with Intel Corporation, a leading figure in the semiconductor industry. His focus on developing innovative circuit structures underscores his pivotal role in enhancing electronic capabilities, driving forward research in microelectronics.

Collaborations

Throughout his career, Crum has collaborated with talented individuals, including coworkers Tahir Ghani and Biswajeet Guha. Such collaborations highlight the importance of teamwork in driving technological advancements and the sharing of innovative ideas within the field.

Conclusion

Dax M Crum's contributions to the realm of integrated circuits significantly enhance our understanding and capabilities in electronic design. His continuous innovations and patents exemplify the forward momentum of technology. As he continues his work at Intel Corporation, Crum remains a key figure in shaping the future of semiconductors and integrated circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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