Dual metal gate structures on nanoribbon semiconductor devices

Abstract

Techniques are provided herein to form semiconductor devices having different work function metals over different devices. The techniques can be used in any number of integrated circuit applications and are particularly useful with respect to gate-all-around (GAA) transistors. In an example, neighboring semiconductor devices each include a different work function to act as the device gate electrode for each semiconductor device. More specifically, a first semiconductor device may be a p-channel GAA transistor with a first work function metal around the various nanoribbons of the transistor, while the second neighboring semiconductor device may be an n-channel GAA transistor with a second work function metal around the various nanoribbons of the transistor. No portions of the first work function metal are present around the nanoribbons of the second semiconductor device and no portions of the second work function metal are present around the nanoribbons of the first semiconductor device.