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Davide Manfré

USPTO Granted Patents = 11 (Patent Applications = 4)

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 36(Granted Patents)

Location History:

Bologna, IT (2004)
Pandino, IT (2008 - 2023)

Company Filing History:

7 out of 5,568

Stmicroelectronics S.r.l.

Years Active: 2004-2023

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11756614 - Phase change memory device, system including the memory device, and method for operating the memory device (2023-09-12),

2. 11328768 - Phase change memory device, system including the memory device, and method for operating the memory device (2022-05-10),

3. 11289158 - Non-volatile memory device including a row decoder with a pull-up stage controlled by a current mirror (2022-03-29),

4. 10861543 - Device for switching between different reading modes of a non-volatile memory and method for reading a non-volatile memory (2020-12-08),

5. 10658032 - Phase-change memory device with drive circuit (2020-05-19),

6. 10600479 - Device for switching between different reading modes of a non-volatile memory and method for reading a non-volatile memory (2020-03-24),

7. 10255973 - Memory device and method of operation thereof (2019-04-09),

8. 7920436 - Sense amplifier (2011-04-05),

9. 7447071 - Low voltage column decoder sharing a memory array p-well (2008-11-04),

10. 6794927 - Modular charge pump architecture (2004-09-21),

11. 6734701 - Fast controlled output buffer (2004-05-11),

Title: Davide Manfré: Innovator in Phase Change Memory Technology

Introduction

Davide Manfré is a notable inventor based in Pandino, Italy. He has made significant contributions to the field of memory devices, particularly in phase change memory technology. With a total of six patents to his name, Manfré's work has advanced the capabilities of memory systems.

Latest Patents

Among his latest patents is a phase change memory device, which includes a system and method for operating the memory device. This innovative design features a column decoder that is divided into two portions, allowing for independent governance. The driving signals of these portions are configured to ensure comparable capacitive loads at the inputs of a sense amplifier during both single-ended and double-ended reading operations. Specifically, during single-ended reading, the sense amplifier's first input receives a capacitive load from the selected memory cell, while the second input receives a load from a non-selected complementary memory cell.

Career Highlights

Davide Manfré is currently employed at STMicroelectronics S.r.l., where he continues to develop cutting-edge memory technologies. His work has been instrumental in enhancing the performance and efficiency of memory devices, making them more reliable for various applications.

Collaborations

Throughout his career, Manfré has collaborated with talented individuals such as Fabio Enrico Carlo Disegni and Cesare Torti. These collaborations have fostered innovation and have contributed to the successful development of his patented technologies.

Conclusion

Davide Manfré's contributions to phase change memory technology exemplify his dedication to innovation in the field. His patents reflect a deep understanding of memory systems and their operational efficiencies. As he continues to work at STMicroelectronics, his future endeavors are likely to further advance the technology landscape.

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