Arcadia, CA, United States of America

David Z Ting

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Infrared Detectors. Top assignees: California Institute of Technology, United States of America as Represented by the Administrator of NASA. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Z Ting. Retrieved from https://idiyas.com/inventor/david-z-ting

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 82.4

Average Co-Inventor Count = 3.6

ph-index = 8

Forward Citations = 148(Granted Patents)


Company Filing History:


Years Active: 2003-2025

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Areas of Expertise:
Barrier Infrared Detectors
Quantum Efficiency
Focal Plane Arrays
Dual-Band Detectors
Photodetectors
Spectrometer
Nanotunneling Junction
Photonic Crystals
Multi-Quantum-Well
Temperature Sensors
Lattice Mismatch
Hyperspectral Detection
17 patents (USPTO):Explore Patents

Title: David Z Ting: Innovator in Infrared Detector Technology

Introduction

David Z Ting is a prominent inventor based in Arcadia, CA (US), known for his significant contributions to the field of infrared detector technology. With a total of 17 patents to his name, Ting has made remarkable advancements that enhance the performance and efficiency of infrared detection systems.

Latest Patents

Among his latest patents, Ting has developed a barrier infrared detector architecture for focal plane arrays. This innovative detector comprises a plurality of pixels, each featuring an n-type semiconductor top contact layer and a p-type semiconductor layer that forms a top p-n junction. The design includes a unipolar electron barrier, a bottom absorber, and an n-type semiconductor bottom contact layer. The unipolar electron barrier is strategically positioned between the p-type semiconductor layer and the bottom absorber, optimizing the detector's functionality.

Another notable patent is for enhanced quantum efficiency barrier infrared detectors. This invention focuses on structures that improve quantum efficiency and outlines methods for their manufacture. The device structures utilize novel combinations of p-type and n-type absorber regions and contact regions, incorporating a 'pBpnn' structure. This configuration consists of a highly p-doped contact layer, an electron unipolar barrier, a p-type absorber section, an n-type absorber section, and a highly n-doped contact layer.

Career Highlights

David Z Ting has had a distinguished career, working with esteemed organizations such as the California Institute of Technology and the United States of America as represented by the Administrator of NASA. His work has significantly impacted the development of advanced infrared detection technologies.

Collaborations

Throughout his career, Ting has collaborated with notable professionals in the field, including Sarath D Gunapala and Arezou Khoshakhlagh. These collaborations have furthered the research and development of innovative infrared detection solutions.

Conclusion

David Z Ting's contributions to infrared detector technology exemplify his dedication to innovation and excellence. His patents and collaborations continue to influence advancements in the field, solidifying his reputation as a leading inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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