The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Oct. 16, 2014
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

David Z. Ting, Arcadia, CA (US);

Sarath D. Gunapala, Stevenson Ranch, CA (US);

Alexander Soibel, South Pasadena, CA (US);

Jean Nguyen, Los Angeles, CA (US);

Arezou Khoshakhlagh, Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 31/02 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/02016 (2013.01); H01L 31/02019 (2013.01); H01L 31/101 (2013.01); H01L 31/1013 (2013.01);
Abstract

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.


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