The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Dec. 12, 2016
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

David Z. Ting, Arcadia, CA (US);

Alexander Soibel, South Pasadena, CA (US);

Arezou Khoshakhlagh, Pasadena, CA (US);

Sarath D. Gunapala, Stevenson Ranch, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/102 (2006.01); H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 27/1463 (2013.01); H01L 27/14649 (2013.01); H01L 31/03046 (2013.01); H01L 31/101 (2013.01); H01L 31/102 (2013.01);
Abstract

Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a 'pBpnn' structure. The detectors generally comprise, in sequence, a highly p-doped contact layer 'p', an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n”.


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