The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Aug. 03, 2011
David Z. Ting, Arcadia, CA (US);
Arezou Khoshakhlagh, Pasadena, CA (US);
Alexander Soibel, South Pasadena, CA (US);
Cory J. Hill, Chesterfield, MO (US);
Sarath D. Gunapala, Stevenson Ranch, CA (US);
David Z. Ting, Arcadia, CA (US);
Arezou Khoshakhlagh, Pasadena, CA (US);
Alexander Soibel, South Pasadena, CA (US);
Cory J. Hill, Chesterfield, MO (US);
Sarath D. Gunapala, Stevenson Ranch, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be 'chirped' (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.