The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Feb. 11, 2014
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Arezou Khoshakhlagh, Pasadena, CA (US);

David Z Ting, Arcadia, CA (US);

Sarath D. Gunapala, Stevenson Ranch, CA (US);

Cory J. Hill, Chesterfield, MO (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 31/101 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 21/0237 (2013.01); H01L 21/02395 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02507 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 31/03046 (2013.01); H01L 31/101 (2013.01); H01L 31/1844 (2013.01); H01L 31/1852 (2013.01);
Abstract

Systems and methods of implementing barrier infrared detectors on lattice mismatched substrates are provided. The barrier infrared detector systems combine an active detector structure (e.g., contact/barrier/absorber pairs) with a non-lattice matched substrate through a multi-layered transitional structure that forms a virtual substrate that can be strain balanced with the detector structure. The transitional metamorphic layer may include one or both of at least one graded metamorphic buffer layer or interfacial misfit array (IMF). A further interfacial layer may be interposed within the transitional structure, in some embodiments this interfacial layer includes at least one layer of AlSb.


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