The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Sep. 25, 2009
David Z. Ting, Arcadia, CA (US);
Cory J. Hill, Pasadena, CA (US);
Alexander Seibel, South Pasadena, CA (US);
Sumith Y. Bandara, Burke, VA (US);
Sarath D. Gunapala, Stevenson Ranch, CA (US);
David Z. Ting, Arcadia, CA (US);
Cory J. Hill, Pasadena, CA (US);
Alexander Seibel, South Pasadena, CA (US);
Sumith Y. Bandara, Burke, VA (US);
Sarath D. Gunapala, Stevenson Ranch, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.