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Cupertino, CA, United States of America

David N Wang

USPTO Granted Patents = 41

Average Co-Inventor Count = 4.3

ph-index = 28

Forward Citations = 6,732(Granted Patents)

Location History:

Warren Township, Somerset County, NJ (US) (1979 - 1983)
Saratoga, CA (US) (1990 - 1994)
Saratogo, CA (US) (1994)
Cupertino, CA (US) (1982 - 2000)

Company Filing History:

36 out of 13,726

Applied Materials, Inc.

Bell Telephone Laboratories

Years Active: 1979-2000

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Areas of Expertise:

PECVD

Silicon Nitride Films

Chemical Vapor Deposition

Plasma Etching

Integrated Circuit Structures

Silicon Oxide

Magnetic Field-Enhanced Plasma

Boron Phosphorus Silicate Glass

Reactive Sputter Etching

Multichamber Process Systems

Thermal CVD

Device Fabrication

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6040022 - PECVD of compounds of silicon from silane and nitrogen (2000-03-21),

2. 5882165 - Multiple chamber integrated process system (1999-03-16),

3. 5874362 - Bromine and iodine etch process for silicon and silicides (1999-02-23),

4. 5871811 - Method for protecting against deposition on a selected region of a (1999-02-16),

5. 5773100 - PECVD of silicon nitride films (1998-06-30),

6. 5755886 - Apparatus for preventing deposition gases from contacting a selected (1998-05-26),

7. 5362526 - Plasma-enhanced CVD process using TEOS for depositing silicon oxide (1994-11-08),

8. 5354715 - Thermal chemical vapor deposition of silicon dioxide and in-situ (1994-10-11),

9. 5354387 - Boron phosphorus silicate glass composite layer on semiconductor wafer (1994-10-11),

10. 5314845 - Two step process for forming void-free oxide layer over stepped surface (1994-05-24),

11. 5300460 - UHF/VHF plasma for use in forming integrated circuit structures on (1994-04-05),

12. 5292393 - Multichamber integrated process system (1994-03-08),

13. 5244841 - Method for planarizing an integrated circuit structure using low melting (1993-09-14),

14. 5219485 - Materials and methods for etching silicides, polycrystalline silicon and (1993-06-15),

15. 5215619 - Magnetic field-enhanced plasma etch reactor (1993-06-01),

Title: The Innovative Journey of David N Wang

Introduction: David N Wang, a visionary inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: David N Wang's latest patents include cutting-edge technologies in artificial intelligence, machine learning, and renewable energy solutions, showcasing his commitment to driving progress in these crucial areas.

Career Highlights: With a career spanning over two decades, David N Wang has held key roles in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents and products that have revolutionized the industry.

Collaborations: Throughout his career, David N Wang has collaborated with top researchers, engineers, and scientists from renowned institutions and companies, fostering a culture of innovation and excellence that has led to the creation of groundbreaking technologies.

Conclusion: David N Wang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a prominent figure in the world of inventions. His work continues to inspire future generations of inventors and shape the technological landscape for years to come.

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