The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Apr. 01, 1992
David N-K Wang, Cupertino, CA (US);
John M White, Hayward, CA (US);
Kam S Law, Union City, CA (US);
Cissy Leung, Union City, CA (US);
Salvador P Umotoy, Pittsburg, CA (US);
Kenneth S Collins, San Jose, CA (US);
John A Adamik, San Ramon, CA (US);
Ilya Perlov, Mountain View, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.