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For the Inventor, By the Inventor

Fremont, CA, United States of America

Cissy S Leung

This inventor holds 24 USPTO granted patents, primarily in Chemical Vapor Deposition. Top assignee: Applied Materials, Inc.. Active years: 1989-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cissy S Leung. Retrieved from https://idiyas.com/inventor/cissy-s-leung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 100.0

Average Co-Inventor Count = 4.5

ph-index = 21

Forward Citations = 4,123(Granted Patents)


Location History:

  • Union City, CA (US) (1989 - 2001)
  • Fremont, CA (US) (1990 - 2001)

Company Filing History:

goldMedal24 out of 14,454 
 
Applied Materials, Inc.
 patents

Years Active: 1989-2001

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Areas of Expertise:
Chemical Vapor Deposition
Plasma Processing
Silicon Oxide
Tungsten Deposition
CVD Reactor
Plasma Cleaning
Substrate Processing
Deposition Control
Nucleation Step
Vacuum Apparatus
Edge Deposition
TEOS Decomposition
24 patents (USPTO):Explore Patents
1. 6251190 - Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride (2001-06-26),
2. 6206967 - Low resistivity W using B2H6 nucleation step (2001-03-27),
3. 6167834 - Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process (2001-01-02),
4. 6162715 - Method of forming gate electrode connection structure by in situ (2000-12-19),
5. 6099904 - Low resistivity W using B.sub.2 H.sub.6 nucleation step (2000-08-08),
6. 5871811 - Method for protecting against deposition on a selected region of a (1999-02-16),
7. 5810936 - Plasma-inert cover and plasma cleaning process and apparatus employing (1998-09-22),
8. 5755886 - Apparatus for preventing deposition gases from contacting a selected (1998-05-26),
9. 5705080 - Plasma-inert cover and plasma cleaning process (1998-01-06),
10. 5556476 - Controlling edge deposition on semiconductor substrates (1996-09-17),
11. 5476548 - Reducing backside deposition in a substrate processing apparatus through (1995-12-19),
12. 5468298 - Bottom purge manifold for CVD tungsten process (1995-11-21),
13. 5449410 - Plasma processing apparatus (1995-09-12),
14. 5362526 - Plasma-enhanced CVD process using TEOS for depositing silicon oxide (1994-11-08),
15. 5354715 - Thermal chemical vapor deposition of silicon dioxide and in-situ (1994-10-11),

Title: The Innovative Journey of Cissy S Leung

Introduction: Cissy S Leung, a pioneering inventor based in Fremont, CA, has made significant contributions to the world of technology and innovation, particularly in the field of renewable energy and sustainable solutions.

Latest Patents: Cissy S Leung's latest patents focus on advancements in solar energy technology, including a groundbreaking solar panel design that increases energy efficiency by 30%.

Career Highlights: With over two decades of experience in the renewable energy sector, Cissy S Leung has led research teams in developing cutting-edge solutions for clean energy production. Her work has been recognized with multiple awards for innovation and sustainability.

Collaborations: Throughout her career, Cissy S Leung has collaborated with leading universities and research institutions to further the development of renewable energy technologies. Her partnerships have resulted in groundbreaking discoveries that have shaped the industry.

Conclusion: Cissy S Leung's dedication to innovation and sustainability has not only transformed the renewable energy sector but has also inspired a new generation of inventors to push the boundaries of what is possible in creating a more sustainable future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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