The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 1995

Filed:

Apr. 13, 1994
Applicant:
Inventors:

Lawrence C Lei, Milpitas, CA (US);

Cissy Leung, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118728 ; 118715 ; 118725 ;
Abstract

A bottom purge manifold for the gas purge channel of a CVD semiconductor processing chamber provides an obstruction in the purge gas flow from a purge gas passage to the central portion of the processing chamber. The gas flow is restricted by a ring having generally equally spaced holes therethrough obstructing the purge channel opening and retained in the channel by spring loaded retaining flanges. A set of fan-shaped slots carry the purge gas from the openings and direct it towards the center portion of the processing chamber. This manifold produces a generally uniform flow from the gas purge manifold to improve the uniformity of vapor deposition on the wafer's surface.


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