The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Jun. 07, 1995
David Nin-Kou Wang, Cupertino, CA (US);
John M White, Hayward, CA (US);
Kam S Law, Union City, CA (US);
Cissy Leung, Union City, CA (US);
Salvador P Umotoy, Pittsburg, CA (US);
Kenneth S Collins, San Jose, CA (US);
John A Adamik, San Ramon, CA (US);
Ilya Perlov, Mountain View, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.