The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Apr. 29, 1996
Applicant:
Inventors:
Jerry Yuen-Kui Wong, Union City, CA (US);
David Nin-Kou Wang, Cupertino, CA (US);
Mei Chang, San Jose, CA (US);
Alfred W Mak, Union City, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438719 ; 438710 ; 252 791 ;
Abstract
A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.