The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Feb. 02, 1990
Peter W Lee, Fremont, CA (US);
David N Wang, Saratoga, CA (US);
Makoto Nagashima, Machida, JP;
Kazuto Fukuma, Ibaraki, JP;
Tatsuya Sato, Narita, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A two step process is disclosed for forming a silicon oxide layer over a stepped surface of a semiconductor wafer while inhibiting the formation of voids in the oxide layer which comprises depositing a layer of an oxide of silicon over a stepped surface of a semiconductor wafer in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O.sub.3, and tetraethylorthosilicate as the gaseous source of silicon while maintaining the pressure in the CVD chamber within a range of from about 250 Torr to about 760 Torr and then depositing a second layer of oxide over the first layer in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O.sub.3 ; and tetraethylorthosilicate as the gaseous source of silicon while maintaining the CVD chamber at a lower pressure than during the first deposition step.