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For the Inventor, By the Inventor

Narita, Japan

Tatsuya Sato

This inventor holds 4 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 1994-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuya Sato. Retrieved from https://idiyas.com/inventor/tatsuya-sato-es6emi93

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 175(Granted Patents)


Company Filing History:

goldMedal4 out of 14,482 
 
Applied Materials, Inc.
 patents

Years Active: 1994-2000

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4 patents (USPTO):Explore Patents
1. 6060397 - Gas chemistry for improved in-situ cleaning of residue for a CVD (2000-05-09),
2. 5591494 - Deposition of silicon nitrides by plasma-enhanced chemical vapor (1997-01-07),
3. 5508067 - Deposition of silicon nitride by plasma-enchanced chemical vapor (1996-04-16),
4. 5314845 - Two step process for forming void-free oxide layer over stepped surface (1994-05-24),

Title: The Innovative Journey of Tatsuya Sato

Introduction: Tatsuya Sato, a visionary inventor hailing from Narita, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Tatsuya Sato's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge solutions for renewable energy storage systems.

Career Highlights: With a career spanning over two decades, Tatsuya Sato has worked with leading tech companies in Japan, spearheading research and development projects that have revolutionized various industries.

Collaborations: Throughout his career, Tatsuya Sato has collaborated with top researchers and engineers from renowned universities and research institutions worldwide, fostering a culture of innovation and excellence.

Conclusion: Tatsuya Sato's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and engineers globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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