The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1996
Filed:
Jul. 26, 1995
Applicant:
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427579 ; 427294 ; 4272552 ; 427585 ;
Abstract
A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.
Sato, Tatsuya. (1996). Deposition of silicon nitride by plasma-enchanced chemical vapor (U.S. Patent No. 5508067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5508067
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile