Besenbüren, Switzerland

Daniele Caimi

This inventor holds 13 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: International Business Machines Corporation. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniele Caimi. Retrieved from https://idiyas.com/inventor/daniele-caimi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13 

% Patents Active = 53.8

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Rueschlikon, CH (2014 - 2015)
  • Rueschlikon, DE (2017)
  • Besenbueren, CH (2015 - 2020)

Company Filing History:


Years Active: 2014-2020

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Areas of Expertise:
Compound Semiconductor
Semiconductor Structures
Fin Structures
CMOS Technology
High-Mobility Channels
Hybrid Circuits
Carbon-Based Memory
Group III-V
Si/Ge FINFET
Integrated Circuit
13 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Daniele Caimi

Introduction

Daniele Caimi is a prominent inventor based in Besenbueren, Switzerland. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on the fabrication of advanced semiconductor structures, which are crucial for the development of modern electronic devices.

Latest Patents

Caimi's latest patents include innovative methods for the fabrication of compound semiconductor structures. One patent describes a semiconductor substrate that includes a first semiconductor material with an insulating layer formed on it. An opening is created in the insulating layer to expose a seed surface of the substrate. This design allows for the growth of a matching array on the seed surface, incorporating multiple semiconductor materials that differ from one another.

Another notable patent involves the fabrication of semiconductor fin structures. This process begins with a semiconductor substrate and an insulating layer. A cavity structure is formed above the insulating layer, which includes a lateral growth channel and a fin seed structure. This structure enables the sequential growth of different semiconductor materials, resulting in a fin structure composed of parallel fins.

Career Highlights

Daniele Caimi is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and effective.

Collaborations

Caimi has collaborated with notable colleagues, including Lukas Czornomaz and Jean Fompeyrine, who is a talented woman in the field. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Daniele Caimi's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborations with esteemed colleagues highlight his dedication to advancing this critical area of research. Caimi's work continues to influence the future of electronic devices and semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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