The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Aug. 26, 2015
International Business Machines Corporation, Armonk, NY (US);
Daniele Caimi, Besenbueren, CH;
Lukas Czornomaz, Zurich, CH;
Jean Fompeyrine, Waedenswil, CH;
Emanuele Uccelli, Rueschlikon, CH;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Method for fabricating a semiconductor structure. The method includes: providing a crystalline silicon substrate; defining an opening in a dielectric layer on the crystalline silicon substrate, the opening having sidewalls and a bottom wherein the bottom corresponds to a surface of the crystalline silicon substrate; providing a confinement structure above the dielectric layer, thereby forming a confinement region between the confinement structure and the dielectric layer; and growing a crystalline compound semiconductor material in the confinement region thereby at least partially filling the confinement region. The present invention also provides an improved compound semiconductor structure and a device for fabricating such semiconductor structure.