Lukas Czornomaz

This inventor holds 55 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2015-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lukas Czornomaz. Retrieved from https://idiyas.com/inventor/lukas-czornomaz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55 (Patent Applications = 2)

% Patents Active = 52.7

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 140(Granted Patents)

Forward Citations (Not Self Cited) = 129(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Rueschlikon, CH (2016 - 2017)
Rueschlikon, DE (2017)
Zurich, CH (2015 - 2023)

Company Filing History:

54 out of 166,325

International Business Machines Corporation

Years Active: 2015-2023

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Areas of Expertise:

Semiconductor Fabrication

Electro-Optical Devices

Capacitorless DRAM

Field-Effect Transistor

Lateral Current Injection

Optoelectronic Structures

Qubit Biasing

III-V Layers

Radiation Detector

GaN on Insulator

CMOS Technology

Resistive Memory

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11674237 - Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers (2023-06-13),

2. 11621340 - Field-effect transistor structure and fabrication method (2023-04-04),

3. 11270999 - Capacitorless DRAM cell (2022-03-08),

4. 11201246 - Field-effect transistor structure and fabrication method (2021-12-14),

5. 11183978 - Low-noise amplifier with quantized conduction channel (2021-11-23),

6. 11075307 - Compact electro-optical devices with laterally grown contact layers (2021-07-27),

7. 11070029 - Method of forming an electro-optical device with lateral current injection regions (2021-07-20),

8. 11031402 - Capacitorless dram cell (2021-06-08),

9. 10897121 - Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals (2021-01-19),

10. 10840264 - Ultra-thin-body GaN on insulator device (2020-11-17),

11. 10840093 - Fabrication of semiconductor substrates (2020-11-17),

12. 10810506 - Qubit biasing scheme using non-volatile devices (2020-10-20),

13. 10763644 - Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals (2020-09-01),

14. 10734787 - Electro-optical device with lateral current injection regions (2020-08-04),

15. 10594111 - Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals (2020-03-17),

Title: Lukas Czornomaz: Pioneering Innovation in Technology

Introduction

Lukas Czornomaz, a visionary inventor based in Zurich, Switzerland, has garnered widespread acclaim for his relentless pursuit of innovation and commitment to shaping a better future through technology. With an impressive portfolio of 55 patents, Czornomaz has carved a niche for himself as a true pioneer in the world of inventions.

Latest Patents

Among his latest patents is a groundbreaking method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers. This innovative technique opens up new possibilities in semiconductor device fabrication. Additionally, Czornomaz has patented a field-effect transistor structure and fabrication method, revolutionizing the way transistor structures are fabricated on substrates.

Career Highlights

Throughout his illustrious career, Czornomaz has made significant contributions to the field of technology. He has worked with renowned companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc., where he played a pivotal role in driving technological advancements and bringing innovative ideas to life.

Collaborations

Collaboration has been at the heart of Czornomaz's success. He has worked closely with esteemed colleagues such as Jean Fompeyrine and Veeresh Vidyadhar Deshpande, leveraging their expertise to push the boundaries of technological innovation further.

Conclusion

In conclusion, Lukas Czornomaz's dedication to innovation and his groundbreaking work in technology underscore his status as a pioneering inventor. His relentless pursuit of excellence and commitment to creating a better future through his inventions solidify his legacy as a true visionary in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: