The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
May. 14, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Yannick Baumgartner, Thalwil, CH;
Bernd W. Gotsmann, Horgen, CH;
Jean Fompeyrine, Waedenswil, CH;
Lukas Czornomaz, Zurich, CH;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/02 (2006.01); C30B 1/10 (2006.01); H01L 21/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
C30B 1/02 (2013.01); C30B 1/026 (2013.01); C30B 1/10 (2013.01); H01L 21/02543 (2013.01); H01L 43/10 (2013.01);
Abstract
Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.