The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Feb. 01, 2016
International Business Machines Corporation, Armonk, NY (US);
Daniele Caimi, Rueschlikon, DE;
Lukas Czornomaz, Rueschlikon, DE;
Veeresh Vidyadhar Deshpande, Rueschlikon, DE;
Vladimir Djara, Rueschlikon, DE;
Jean Fompeyrine, Rueschlikon, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is disclosed for fabricating a semiconductor circuit. A semiconductor substrate is provided. A first semiconductor device is fabricated including a first semiconductor material on the substrate and forming an insulating layer including a cavity structure on the first semiconductor device. The cavity structure includes at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure including a second semiconductor material different from the first semiconductor material in the growth channel, forming a semiconductor starting structure for a second semiconductor device from the filling structure, and fabricating a second semiconductor device including the starting structure. Corresponding semiconductor circuits are also disclosed.