The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Jun. 24, 2011
Applicants:

Daniele Caimi, Rueschlikon, CH;

Evangelos S. Eleftheriou, Rueschlikon, CH;

Charalampos Pozidis, Rueschlikon, CH;

Christophe P. Rossel, Rueschlikon, CH;

Abu Sebastian, Rueschlikon, CH;

Inventors:

Daniele Caimi, Rueschlikon, CH;

Evangelos S. Eleftheriou, Rueschlikon, CH;

Charalampos Pozidis, Rueschlikon, CH;

Christophe P. Rossel, Rueschlikon, CH;

Abu Sebastian, Rueschlikon, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 45/04 (2013.01); H01L 45/1253 (2013.01); H01L 45/149 (2013.01); G11C 13/0002 (2013.01); G11C 2213/15 (2013.01); G11C 2213/35 (2013.01);
Abstract

A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.


Find Patent Forward Citations

Loading…