Dai-Liang Ma

Title: Dai-Liang Ma: Innovator in Silicon Carbide Technology

Introduction

Dai-Liang Ma is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of materials science, particularly in the development of silicon carbide technologies. With a total of 10 patents to his name, his work has advanced the understanding and application of this important semiconductor material.

Latest Patents

Dai-Liang Ma's latest patents include innovations in semi-insulating single-crystal silicon carbide bulk material and powder. The first patent provides a semi-insulating single-crystal silicon carbide bulk material that includes one polytype single crystal. This material features a silicon vacancy concentration greater than 5E11 cm⁻³. The second patent outlines a manufacturing method for semi-insulating single-crystal silicon carbide powder. This method involves refining the bulk material to obtain coarse particles with specific silicon-vacancy concentrations and particle diameters, ultimately producing fine powder suitable for various applications.

Career Highlights

Throughout his career, Dai-Liang Ma has worked with notable organizations such as the National Chung Shan Institute of Science and Technology and Taisic Materials Corporation. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects, further enhancing his expertise in silicon carbide materials.

Collaborations

Dai-Liang Ma has collaborated with several talented individuals in his field, including Bang-Ying Yu and Bo-Cheng Lin. These partnerships have contributed to the successful development of his patented technologies and have fostered innovation in the industry.

Conclusion

Dai-Liang Ma's contributions to silicon carbide technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in materials science and semiconductor applications.