The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Feb. 16, 2017
National Chung Shan Institute of Science and Technology, Taoyuan, TW;
Dai-Liang Ma, Taoyuan, TW;
Cheng-Jung Ko, Taoyuan, TW;
Bang-Ying Yu, Taoyuan, TW;
Tsao-Chun Peng, Taoyuan, TW;
Abstract
A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.