Bang-Ying Yu

Title: Bang-Ying Yu: Innovator in Silicon Carbide Technology

Introduction

Bang-Ying Yu is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor materials, particularly in the development of silicon carbide technologies. With a total of 9 patents to his name, Yu's work has advanced the understanding and application of this critical material in various industries.

Latest Patents

Among his latest patents, Yu has developed a semi-insulating single-crystal silicon carbide bulk material and powder. This innovation includes a polytype single crystal that features silicon vacancies, with a concentration greater than 5E11 cm⁻³. Additionally, he has created a manufacturing method for this semi-insulating single-crystal silicon carbide powder, which involves refining the bulk material to obtain coarse particles and subsequently processing them into fine powder. The resulting powder maintains a silicon-vacancy concentration exceeding 5E11 cm⁻³ and a particle diameter ranging from 1 μm to 50 μm.

Career Highlights

Yu has held positions at notable organizations, including the National Chung Shan Institute of Science and Technology and Taisic Materials Corporation. His work at these institutions has allowed him to collaborate with other experts in the field and contribute to groundbreaking research in semiconductor materials.

Collaborations

Some of his notable coworkers include Dai-Liang Ma and Bo-Cheng Lin. Their collaborative efforts have further enhanced the research and development of silicon carbide technologies.

Conclusion

Bang-Ying Yu's innovative work in silicon carbide technology has positioned him as a key figure in the semiconductor industry. His patents and contributions continue to influence advancements in material science and engineering.