The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Dec. 20, 2019
Applicant:
National Chung-shan Institute of Science and Technology, Taoyuan, TW;
Inventors:
Chih-Wei Kuo, Hsinchu, TW;
Dai-Liang Ma, Taoyuan, TW;
Chia-Hung Tai, New Taipei, TW;
Bang-Ying Yu, Taoyuan, TW;
Cheng-Jung Ko, New Taipei, TW;
Bo-Cheng Lin, Taoyuan, TW;
Hsueh-I Chen, Taoyuan, TW;
Assignee:
National Chung-Shan Institute of Science and Technology, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C23C 14/24 (2006.01); C23C 14/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/005 (2013.01); C23C 14/0635 (2013.01); C23C 14/243 (2013.01); C30B 23/02 (2013.01); C30B 29/36 (2013.01);
Abstract
A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.