The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jun. 03, 2021
Taisic Materials Corp., Taoyuan, TW;
TAISIC MATERIALS CORP., Taoyuan, TW;
Abstract
The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the first particle diameter is between 50 μm and 350 μm; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal silicon carbide powder has a third silicon-vacancy concentration and a second particle diameter, the third silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the second particle diameter is between 1 μm and 50 μm.