The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jun. 03, 2021
Applicant:

Taisic Materials Corp., Taoyuan, TW;

Inventors:

Dai-Liang Ma, Taoyuan, TW;

Bang-Ying Yu, Taoyuan, TW;

Bo-Cheng Lin, Taoyuan, TW;

Assignee:

TAISIC MATERIALS CORP., Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/02 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 23/02 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01);
Abstract

The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}-3.


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