The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Nov. 16, 2016
National Chung Shan Institute of Science and Technology, Taoyuan, TW;
Dai-Liang Ma, Taoyuan, TW;
Hsueh-I Chen, Taoyuan, TW;
Bo-Cheng Lin, Taoyuan, TW;
Cheng-Jung Ko, Taoyuan, TW;
Ying-Cong Zhao, Taoyuan, TW;
Chih-Wei Kuo, Taoyuan, TW;
Shu-Yu Yeh, Taoyuan, TW;
NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan, TW;
Abstract
A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.