Chun-Hu Cheng

Title: Innovations by Inventor Chun-Hu Cheng

Introduction

Chun-Hu Cheng, an accomplished inventor based in Tainan, Taiwan, has made significant contributions in the field of storage memory devices and flash memory structures. With a portfolio of five patents, his work demonstrates a continuous commitment to advancing technology and improving memory storage capabilities.

Latest Patents

Cheng's latest patents include groundbreaking innovations in memory technology. One notable invention is a storage memory device that features a vertical field effect transistor composed of a semiconductor substrate. This device incorporates a pillar extending upward from the substrate, containing a source, a drain, and a channel. Noteworthy components include a first insulating layer and a stacked structure that comprises a charge trapping layer along with a composite element. The composite element is composed of a ferroelectric layer made of doped hafnium oxide-based material, exhibiting negative capacitance, and an antiferroelectric layer constructed from zirconium oxide-based material.

Another significant patent is that of a flash memory structure along with the method for its manufacturing. This innovation consists of a substrate, source, drain, and various layers including a tunnel isolation layer and a ferroelectric-charge-trapping layer. The flash memory structure is specifically designed to improve performance using the ferroelectric negative-capacitance effect layer, made of materials exhibiting such characteristics.

Career Highlights

Chun-Hu Cheng has built a strong career around his innovative ideas and technological advancements. He has worked with esteemed organizations, notably the National Taiwan Normal University and Phison Electronics Corporation. His roles in these companies have facilitated his research and the development of his patented technologies, helping to shape the future of memory devices.

Collaborations

Throughout his career, Cheng has collaborated with notable coworkers in his field, including Chun-Yen Chang and Yu-Chien Chiu. These partnerships have likely enhanced his research and development efforts, fostering an environment of innovation and creative problem-solving.

Conclusion

In summary, inventor Chun-Hu Cheng from Tainan, Taiwan, is a prominent figure in the realm of memory technology. With five patents to his name, his latest innovations in storage memory devices and flash memory structures underscore his commitment to pushing the boundaries of technology. As he continues his work, his contributions are anticipated to significantly influence advancements in the field.