The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Mar. 20, 2017
Applicant:
National Taiwan Normal University, Taipei, TW;
Inventors:
Assignee:
National Taiwan Normal University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/28291 (2013.01); H01L 29/1054 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes a substrate, a channel layer, a barrier layer, a source and a drain, a p-type nitride layer and a strain gate. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source and the drain are respectively disposed at two sides of the barrier layer. The p-type nitride layer is disposed on the barrier layer. The strain gate is disposed over the p-type nitride layer for tuning a first strain of the channel layer and a second strain of the barrier layer.