The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Mar. 17, 2017
Phison Electronics Corp., Miaoli, TW;
Chun-Yen Chang, Hsinchu County, TW;
Chun-Hu Cheng, Taipei, TW;
Wei Lin, Taipei, TW;
Yu-Chien Chiu, Kaohsiung, TW;
Chien Liu, Pingtung County, TW;
PHISON ELECTRONICS CORP., Miaoli, TW;
Abstract
A three-dimensional non-volatile memory structure including a substrate, a stacked structure, a charge storage pillar, a channel pillar, and a ferroelectric material pillar is provided. The stacked structure is disposed on the substrate and includes a plurality of conductive layers and a plurality of first dielectric layers, and the conductive layers and the first dielectric layers are alternately stacked. The charge storage pillar is disposed in the stacked structure. The channel pillar is disposed inside the charge storage pillar. The ferroelectric material pillar is disposed inside the channel pillar.