Chue-San Yoo

This inventor holds 44 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1992-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chue-San Yoo. Retrieved from https://idiyas.com/inventor/chue-san-yoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 (Patent Applications = 1)

% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 17

Forward Citations = 794(Granted Patents)

Location History:

Hsin-Chuang, Taipei, TW (1992)
Taipei, TW (1993 - 1996)
Ta-chi Tsneng, TW (1996)
Hsin-Chu County, TW (1997)
Pao-San Hsiang, TW (1999)
Hsin-chu, TW (1995 - 2018)

Company Filing History:

44 out of 42,810

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 1992-2018

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Areas of Expertise:

Semiconductor

MOSFET

DRAM

Planarization

Isolation Structure

Contact Hole

Field Oxide

Integrated Circuit

Capacitors

Ion Implantation

Silicon Nitride

Thermal Anneal

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10162276 - Apparatus for shielding reticle (2018-12-25),

2. 8921014 - Lithography mask and method of forming a lithography mask (2014-12-30),

3. 6670690 - Method of making an improved field oxide isolation structure for semiconductor integrated circuits having higher field oxide threshold voltages (2003-12-30),

4. 6426478 - Planarization using laser ablation (2002-07-30),

5. 6346729 - Pseudo silicon on insulator MOSFET device (2002-02-12),

6. 6271125 - Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure (2001-08-07),

7. 6242341 - Planarization using laser ablation (2001-06-05),

8. 6200836 - Using oxide junction to cut off sub-threshold leakage in CMOS devices (2001-03-13),

9. 6177340 - Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure (2001-01-23),

10. 6168984 - Reduction of the aspect ratio of deep contact holes for embedded DRAM devices (2001-01-02),

11. 6093616 - Method of manufacture of stacked gate MOS structure for multiple voltage (2000-07-25),

12. 6071783 - Pseudo silicon on insulator MOSFET device (2000-06-06),

13. 6054368 - Method of making an improved field oxide isolation structure for (2000-04-25),

14. 6033969 - Method of forming a shallow trench isolation that has rounded and (2000-03-07),

15. 6025270 - Planarization process using tailored etchback and CMP (2000-02-15),

Title: The Innovative Journey of Chue-San Yoo

Introduction: Chue-San Yoo, a pioneering female inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the world of technology and innovation.

Latest Patents: Chue-San Yoo's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and storage solutions.

Career Highlights: With a career spanning over two decades, Chue-San Yoo has been at the forefront of cutting-edge research and development in the renewable energy sector. Her work has led to the creation of several groundbreaking technologies that have revolutionized the way we harness and utilize solar energy.

Collaborations: Throughout her career, Chue-San Yoo has collaborated with leading research institutions, universities, and companies around the globe to further the development of sustainable energy solutions. Her collaborative efforts have resulted in numerous successful projects and innovations that have had a lasting impact on the industry.

Conclusion: Chue-San Yoo's dedication to innovation and her relentless pursuit of sustainable energy solutions have solidified her reputation as a trailblazer in the field of renewable energy. Her work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible in the realm of clean energy technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: