The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 13, 2011
Applicants:
Chue-san Yoo, Hsin-Chu, TW;
Chun-lang Chen, Madou Township, TW;
Inventors:
Chue-San Yoo, Hsin-Chu, TW;
Chun-Lang Chen, Madou Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/58 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/54 (2013.01); G03F 1/58 (2013.01);
Abstract
A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoSiN) layer. The first MoSiNlayer is over the transparent substrate. A percentage of molybdenum (x) of the first MoSiNlayer is between 1 and 2. A percentage of silicon (y) of the first MoSiNlayer is between 50 and 55. A percentage of nitride (z) of the first MoSiNlayer is between 40 and 50. The first MoSiNlayer has an opening therethrough.