The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Sep. 30, 1996
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438425 ; 438426 ; 438424 ; 438443 ;
Abstract
A method is provided for forming a shallow trench isolation that has rounded and protected corners by first forming a bird's beak field oxide layer prior to the trench-forming step such that a rounded and protected top corner and a rounded bottom corner of the trench can be formed. The rounded top and bottom corners of the shallow trench opening have a radius of at least 100 .ANG. and a trench depth of not more than 5000 .ANG.. The top corner of the trench opening is protected by the beak portion of the bird's beak against etching in a subsequent oxide dip process before gate formation.