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For the Inventor, By the Inventor

Taipei, Taiwan

Chin-Te Kuo

This inventor holds 15 USPTO granted patents. Top assignee: Nan Ya Technology Corporation. Active years: 2014-2025.

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal15 out of 2,541 
 
Nan Ya Technology Corporation
 patents

Years Active: 2014-2025

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15 patents (USPTO):Explore Patents
1. 12245415 - Method of manufacturing semiconductor device having protrusion of word line (2025-03-04),
2. 12178035 - Semiconductor device having protrusion of word line (2024-12-24),
3. 12014986 - Method for preparing semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing lining layer (2024-06-18),
4. 11895826 - Method for preparing semiconductor device structure with air gap (2024-02-06),
5. 11646268 - Semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing liner having different thicknesses (2023-05-09),
6. 11587885 - Method for fabricating semiconductor device with EMI protection structure (2023-02-21),
7. 11417726 - Semiconductor structure having air gap dielectric (2022-08-16),
8. 11417608 - Semiconductor device with EMI protection structure and method for fabricating the same (2022-08-16),
9. 11217591 - Semiconductor device structure with air gap and method for preparing the same (2022-01-04),
10. 11049715 - Method for manufacturing a semiconductor structure (2021-06-29),
11. 10957760 - Semiconductor structure having air gap dielectric and method of preparing the same (2021-03-23),
12. 9093471 - Method for forming trench MOS structure (2015-07-28),
13. 8912595 - Trench MOS structure and method for forming the same (2014-12-16),
14. 8816715 - MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test (2014-08-26),
15. 8692318 - Trench MOS structure and method for making the same (2014-04-08),

Title: Chin-Te Kuo: Innovator in Semiconductor Technology

Introduction

Chin-Te Kuo is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on innovative methods and devices that enhance the performance and efficiency of semiconductor components.

Latest Patents

Among his latest patents, Kuo has developed a method of manufacturing a semiconductor device that features a protrusion of the word line. This method includes providing a substrate, forming a conductive layer on the substrate, and patterning the conductive layer to create a first and second metallization layer. The first metallization layer has a protruding portion that extends toward the second metallization layer. Additionally, he has patented a semiconductor device that incorporates a substrate, dielectric layer, and multiple channel layers surrounded by metallization layers, further advancing the capabilities of semiconductor technology.

Career Highlights

Chin-Te Kuo is currently employed at Nan Ya Technology Corporation, where he continues to innovate in the semiconductor field. His expertise and dedication have positioned him as a key figure in the development of advanced semiconductor devices.

Collaborations

Kuo has collaborated with notable colleagues, including Yi-Nan Chen and Hsien-Wen Liu, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Chin-Te Kuo's work in semiconductor technology exemplifies innovation and dedication. His patents and contributions continue to shape the future of the industry, making him a significant figure in the field.

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