logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093471 B1

PDFFull Text
Date of Patent:
Jul. 28, 2015

Filed:

Nov. 06, 2014

Method for forming trench mos structure

Applicant:

Nanya Technology Corp., Tao-Yuan Hsien, TW;

Inventors:

Chin-Te Kuo, New Taipei, TW;

Yi-Nan Chen, Taipei, TW;

Hsien-Wen Liu, Taoyuan County, TW;

Assignee:

NANYA TECHNOLOGY CORP., Gueishan Dist., Taoyuan, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Mohammad Islam

Assistant Examiner:

John P Dulka

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 21/3083 (2013.01);
Abstract

A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.

Find Patent Forward Citations

Kuo, Chin-Te. (2015). Method for forming trench mos structure (U.S. Patent No. 9093471). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9093471

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…