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For the Inventor, By the Inventor

Taoyuan County, Taiwan

Hsien-Wen Liu

USPTO Granted Patents = 76 

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 209(Granted Patents)

Forward Citations (Not Self Cited) = 208(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taoyuan Hsien, TW (2001)
  • Tainan, TW (2002 - 2005)
  • Taiwan, TW (2005)
  • Taoyuan, TW (2006 - 2019)
  • Taoyuan County, TW (2011 - 2019)
  • Luzhu Township, Taoyuan County, TW (2018 - 2019)

Company Filing History:

goldMedal71 out of 2,321 
 
Nan Ya Technology Corporation
 patents
silverMedal3 out of 123 
 
Inotera Memories, Inc.
 patents
bronzeMedal2 out of 7 
 
Chingis Technology Corporation
 patents

Years Active: 2001-2019

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Areas of Expertise:
Hybrid Memory System
DRAM Technology
Volatile Memory Preservation
Power Management in DRAM
Vertical MOSFET Devices
Chemical Mechanical Polishing
Memory Device Fabrication
Trench MOS Structure
Transistor Manufacturing
Semiconductor Processes
Distance Monitoring Devices
Memory Layout Structures
76 patents (USPTO):Explore Patents
1. 10437499 - Hybrid memory system and method of operating the same (2019-10-08),
2. 10380024 - DRAM and method of operating the same in an hierarchical memory system (2019-08-13),
3. 10354713 - DRAM and method for determining binary logic using a test voltage level (2019-07-16),
4. 10338831 - System and method for preserving data in volatile memory (2019-07-02),
5. 10332580 - DRAM and method for determining binary logic using a test voltage level (2019-06-25),
6. 10332579 - DRAM and method for operating the same (2019-06-25),
7. 10297304 - Memory device and operating method thereof (2019-05-21),
8. 10276228 - DRAM and method of operating the same (2019-04-30),
9. 10269445 - Memory device and operating method thereof (2019-04-23),
10. 10262719 - DRAM and refresh method thereof (2019-04-16),
11. 10236035 - DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events (2019-03-19),
12. 10141043 - DRAM and method for managing power thereof (2018-11-27),
13. 10127967 - DRAM and method for operating the same (2018-11-13),
14. 10049714 - DRAM and method for managing power thereof (2018-08-14),
15. 10019350 - Dram and method for accessing a dram (2018-07-10),

Title: Hsien-Wen Liu: Pioneering Innovations in Memory Systems

Introduction:

In the realm of technology and innovation, Hsien-Wen Liu stands out as a visionary inventor whose passion for innovation and quest for excellence have shaped the landscape of memory systems. With a track record of 76 patents and a stronghold in Taoyuan County, TW, Liu continues to inspire future generations of inventors.

Latest Patents:

Liu's latest patents showcase his groundbreaking work in memory systems. One of his inventions includes a hybrid memory system that revolutionizes data storage by efficiently utilizing both non-volatile and volatile memories. Additionally, his work on a DRAM and its operational method in a hierarchical memory system showcases his expertise in enhancing data access and storage capabilities.

Career Highlights:

Having made significant contributions to the field of technology, Liu has garnered a reputation for his innovative solutions. His tenure at companies like Nan Ya Technology Corporation and Inotera Memories, Inc. has provided him with a platform to unleash his creative genius and drive advancements in memory systems.

Collaborations:

Liu's collaborations with esteemed colleagues such as Yi-Nan Chen and Chung-Hsun Lee have resulted in synergistic innovations that have pushed the boundaries of memory technology. Together, they have worked tirelessly to develop cutting-edge solutions that have redefined the way data is stored and accessed.

Conclusion:

In conclusion, Hsien-Wen Liu's relentless pursuit of innovation and his invaluable contributions to memory systems have cemented his legacy as a pioneering inventor. His visionary approach to problem-solving and his collaborative spirit continue to inspire and shape the future of technology.

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