The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Feb. 20, 2018
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Chung-Hsun Lee, New Taipei, TW;
Hsien-Wen Liu, Taoyuan County, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 7/1051 (2013.01); G11C 7/1075 (2013.01); G11C 11/406 (2013.01); G11C 11/4076 (2013.01); G11C 29/02 (2013.01);
Abstract
A dynamic random access memory (DRAM) DRAM includes a memory array, a temperature sensor and a control device. The temperature sensor is configured to sense a temperature of the DRAM. The control device is configured to adjust a sense frequency based on a retention ability of the memory array, and to activate the temperature sensor according to the adjusted sense frequency.