The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Nov. 12, 2017
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chung-Hsun Lee, New Taipei, TW;

Hsien-Wen Liu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G06F 11/07 (2006.01); G11C 7/20 (2006.01);
U.S. Cl.
CPC ...
G11C 11/406 (2013.01); G06F 11/0766 (2013.01); G11C 11/40607 (2013.01); G11C 7/20 (2013.01); G11C 2211/4062 (2013.01); G11C 2211/4067 (2013.01);
Abstract

An operating method of a memory device includes the following operations: during a refresh operation with the first refresh rate, generating a first ECC according to first data, and generating a second ECC according to second data; determining whether an error exists in the first data or not during the refresh operation with a second refresh rate; determining whether the error exists in the second data or not during the refresh operation with a third refresh rate; and if it is determined that the error exists in the first data and/or the second data, correcting the first data and/or the second data. The second refresh rate and the third refresh rate are lower than the first refresh rate, and the third refresh rate is lower than the second refresh rate. The correcting ability of the second ECC is higher than the correcting ability of the first ECC.


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