Nan Ya Technology Corporation

Inotera Memories, Inc.

Chingis Technology Corporation

Hsien-Wen Liu

Yi-Nan Chen

Chung-Hsun Lee

Tieh-Chiang Wu

Tse-Yao Huang

Jar-Ming Ho

Chin-Te Kuo

Shing-Yih Shih

Kuo-Hui Su

Wen-Chieh Wang

Li-Chung Liu

Jeng-Hsing Jang

Chung-Lin Huang

Tzu-Ching Tsai

Ping Cheng Hsu

Tzeng-Huei Shiau

Chih-Ching Lin

Shang-De Chang

Tzung Han Lee

Hsiu-Chun Lee

Alex Wang

Han-Chih Lin

I-Sheng Liu

Chang-Ming Wu

Tzung-Han Lee

Chung-Yuan Lee

Yi-Chen Chen

Yinan Chen

Wei-Ray Lin

Hsin-Jung Ho

Hsin-Chuan Tsai

Chien-Mao Liao

Hui Min Mao

Ming-Teng Hsieh

Kaan-Lu Tzou

Tung-Wang Huang

The present disclosure provides a hybrid memory system and a method of operating the same. The hybrid memory system includes a non-volatile memory, a volatile memory and a controller. The volatile memory stores data. The controller is configured to move the data from the volatile memory to the non-volatile memory in response to a command to enter a power-saving mode. The controller precludes the volatile memory from having a self-refresh operation performed thereon after the movement of the data.

Hybrid memory system and method of operating the same

The present disclosure provides a dynamic random access memory (DRAM), and a method of operating the same. The DRAM includes a memory row and a buffer. The memory row is configured to store a data, wherein the memory row does not provide the data to the buffer in response to a request to read the data. The buffer is configured to store the data as a temporarily-stored data, wherein the buffer provides the temporarily-stored data in response to the request.

DRAM and method of operating the same in an hierarchical memory system

A dynamic random access memory (DRAM) includes a memory array and a control device. The memory array includes a refresh unit. The refresh unit includes a first cell and a second cell. The first cell is configured to store data, and have a programmed voltage level by being programmed. The second cell is configured to have a test voltage level by being programmed in conjunction with the first cell, wherein the first cell and the second cell are controllable by a same row of the memory array. The control device is configured to increase a voltage difference between the programmed voltage level and a standard voltage level for determining binary logic when the test voltage level becomes lower than a threshold voltage level, wherein the threshold voltage level is higher than the standard voltage level.

DRAM and method for determining binary logic using a test voltage level

Present disclosure includes a system for preserving data in a volatile memory and a method thereof. The volatile memory comprises a plurality of refreshing units, and each of the refreshing units comprises a plurality of word lines for storing data. The system comprises an accessing unit. The accessing unit is configured to detect a row-hammer indication indicating a first word line is frequently accessed, wherein the accessing unit is configured to copy data stored in the first word line to a second word line when the row-hammer indication is detected on the first word line, wherein the data stored in the first and the second word lines are available to be selectively accessed.

System and method for preserving data in volatile memory

The present disclosure provides a dynamic random access memory (DRAM) including a memory array and a control device. The memory array includes a refresh unit. The refresh unit includes a first cell and a second cell. The first cell is configured to store data. The second cell is configured to have a stored electrical energy by being programmed with the first cell, wherein the first cell and the second cell are controllable by a same row of the memory array. The control device is configured to increase a refresh rate of the refresh unit to a first refresh rate when the stored electrical energy of the second cell becomes lower than a threshold electrical energy, wherein the threshold electrical energy is higher than a standard electrical energy for determining binary logic.

DRAM and method for operating the same

An operating method of a memory device includes the following operations: during a refresh operation with the first refresh rate, generating a first ECC according to first data, and generating a second ECC according to second data; determining whether an error exists in the first data or not during the refresh operation with a second refresh rate; determining whether the error exists in the second data or not during the refresh operation with a third refresh rate; and if it is determined that the error exists in the first data and/or the second data, correcting the first data and/or the second data. The second refresh rate and the third refresh rate are lower than the first refresh rate, and the third refresh rate is lower than the second refresh rate. The correcting ability of the second ECC is higher than the correcting ability of the first ECC.

Memory device and operating method thereof

A dynamic random access memory (DRAM) DRAM includes a memory array, a temperature sensor and a control device. The temperature sensor is configured to sense a temperature of the DRAM. The control device is configured to adjust a sense frequency based on a retention ability of the memory array, and to activate the temperature sensor according to the adjusted sense frequency.

DRAM and method of operating the same

A memory device includes a memory array, an error correction code (ECC) circuit, and a control circuit. The memory array includes plural memory rows and stores a plurality of data. The control circuit is configured to enter the memory device into a power saving mode with a first refresh rate to refresh the memory array, to control the ECC circuit to generate a first ECC according to first data during refreshing the memory array by the first refresh rate, to reduce the first refresh rate to a second refresh rate, to control the ECC circuit to determine whether an error exists in the first data during refreshing the memory array by the second refresh rate. If the error exists in the first data, the control circuit is further configured to control the ECC circuit to correct the first data.

The present disclosure provides a dynamic random access memory (DRAM) and a method of operating the same. The DRAM includes a memory array, a refresh device and an access device. The refresh device is configured to perform a self-refresh operation on the memory array, wherein the self-refresh operation is interrupted in response to an access command. The access device is configured to access the memory array in response to the access command and the interruption of the self-refresh operation.

DRAM and refresh method thereof

The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a refresh unit, an accessing device and a refresh device. The refresh unit has a plurality of memory rows. The accessing device is configured to access the memory rows. The refresh device is configured to refresh the refresh unit in a first manner in response to a first event, in which a quantity of accessed memory rows of the refresh unit is not greater than a threshold quantity. The refresh device is configured to refresh the refresh unit in a second manner in response to a second event, in which the quantity of accessed memory rows of the refresh unit is greater than the threshold quantity.

DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events

The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a plurality of banks, a power source and a control device. Each of the banks includes a plurality of subarrays. The control device derives information on a quantity of operated subarrays among the subarrays, and determines how much electrical energy to provide based on the information. The power source provides the resultant amount of electrical energy based on the determination from the control device.

DRAM and method for managing power thereof

The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a refresh unit and an accessing device. The refresh unit includes a target row on which a read/write (R/W) operation is requested to be performed. The accessing device is configured to perform the R/W operation on the target row while the refresh unit is being refreshed.

The present disclosure provides a DRAM. The DRAM includes a memory array of memory cells, a control device and a charge pump circuit. The control device derives an information associated with a command, and determine, based on the information, whether to provide an amount of electrical energy greater than, less than, or equal to an amount of electrical energy currently required. The charge pump circuit provides the memory array with the resultant amount of electrical energy based on the determination.

The present disclosure provides a method. The method includes copying a data stored in memory cells associated with a normal word line subject to a row hammer effect into memory cells associated with a hot word line before a condition is satisfied, wherein the condition includes an access frequency of the normal word line reaching a threshold frequency; accessing, based on a logical address, the normal word line before the condition is satisfied; accessing, based on the logical address, the hot word line associated with the copied data only if the condition is satisfied; and accessing the data no longer from the normal word line only if the condition is satisfied.

Growing community of inventors

Taoyuan County, Taiwan

Hsien-Wen Liu