The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Apr. 08, 2022
Nanya Technology Corporation, New Taipei, TW;
Chin-Te Kuo, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure provides a method for preparing a semiconductor device structure. The method includes preparing a substrate having a pattern-dense region and a pattern-loose region; forming a first conductive layer disposed over the substrate; forming a first dielectric layer disposed over the first conductive layer; etching the first dielectric layer to form a first opening and a second opening exposing the first conductive layer; forming a first lining layer and a first conductive plug in the first opening and a second conductive plug in the second opening, wherein the first lining layer comprises manganese (Mn), the first conductive plug comprises copper (Cu), and the first conductive plug and the second plug are surrounded by the first lining layer; and forming a second conductive layer over the first dielectric layer, the first lining layer and the first conductive layer, wherein the second conductive layer comprises copper (Cu).